Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

• DOI: 10.1063/1.4926423
• Publication Date: 2015-07-07T18:27:32Z
• Authors: C. B. Lim; M. Beeler; A. Ajay; J. Lähnemann; E. Bellet-Amalric; C. Bougerol; E. Monroy
• Keywords: Mosaicity; Laser linewidth; Wide-bandgap semiconductor

This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- mid-wavelength infrared ranges. The characterization results are compared to those reference samples polar c-plane, verified by self-consistent Schr\"odinger-Poisson calculations. best terms of mosaicity, surface roughness, photoluminescence linewidth intensity, as well absorption obtained from m-plane structures, which display room-temperature range 1.5 2.9 um. Based these results, a series GaN/AlGaN were designed determine accessible spectral mid-infrared. These exhibit tunable 4.0 5.8 um, long-wavelength limit being set associated with second order Reststrahlen band substrates.