Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor

• DOI: 10.1063/1.4927393
• Publication Date: 2015-07-28T00:30:29Z
• Authors: L. Alloatti; S. A. Srinivasan; J. S. Orcutt; R. J. Ram
• Keywords: Waveguide; Photodiode

We report a waveguide-coupled photodetector realized in standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The exploits carrier generation silicon-germanium normally utilized as stressor pFETs. measured responsivity and 3 dB bandwidth are of 0.023 A/W at wavelength 1180 nm 32 GHz −1 V bias (18 0 bias). dark current is less than 10 pA dynamic range larger 60 dB.