Extracting the temperature distribution on a phase-change memory cell during crystallization

• DOI: 10.1063/1.4966168
• Publication Date: 2016-10-25T17:00:23Z
• Authors: Gokhan Bakan; Burak Gerislioglu; Faruk Dirisaglik; Zoila Jurado; Lindsay Sullivan; Aykutlu Dana; Chung Lam; Ali Gokirmak; Helena Silva
• Keywords: Phase-change memory

Phase-change memory (PCM) devices are enabled by amorphization- and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved melting quenching active volume using short duration pulses (∼ns). The crystallization (set) pulse duration, however, much longer depends on cell temperature reached during pulse. Hence, temperature-dependent process of phase-change materials at device level has to be well characterized achieve fast PCM operations. A main challenge determining crystallization. Here, we report extraction distribution a lateral set measured voltage-current characteristics thermal modelling. effect properties extracted also studied, better design proposed for more accurate extraction. demonstrated study provides promising results characterization within cell.