Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

• DOI: 10.1063/1.4967837
• Publication Date: 2016-11-16T01:30:24Z
• Authors: S. Zhao; S. M. Sadaf; S. Vanka; Y. Wang; R. Rashid; Z. Mi
• Keywords: Ultraviolet; Wide-bandgap semiconductor; Tunnel junction; Quantum Efficiency

We report AlGaN nanowire light emitting diodes (LEDs) operating in the ultraviolet-C band. The LED structures are grown by molecular beam epitaxy on Si substrate. It is found that with use of n+-GaN/Al/p+-AlGaN tunnel junction (TJ), device resistance reduced one order magnitude, and output power increased two orders compared to LEDs without TJ. For unpackaged TJ ultraviolet at 242 nm, a maximum 0.37 mW measured, peak external quantum efficiency up 0.012%.