Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

• DOI: 10.1063/1.5026147
• Publication Date: 2018-04-13T15:39:38Z
• Authors: Daehwan Jung; Robert Herrick; Justin Norman; Katherine Turnlund; Catherine Jan; Kaiyin Feng; Arthur C. Gossard; John E. Bowers
• Keywords: 0103 physical sciences; 01 natural sciences

We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm−2 to 7.3 × 106 cm−2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.