Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

• DOI: 10.1063/1.5086840
• Publication Date: 2019-02-07T16:02:07Z
• Authors: L.-M. Kern; R. Galceran; V. Zatko; M. Galbiati; F. Godel; D. Perconte; F. Bouamrane; E. Gaufrès; A. Loiseau; P. Brus; O. Bezencenet; M.-B. Martin; B. Servet; F. Petroff; B. Dlubak; P. Seneor
• Keywords: Deposition; Diffusion barrier; Black Phosphorus

We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ layer deposition is achieved by using large-scale atomic process with high nucleation density. Raman spectroscopy studies show that this protects the BP from degradation in ambient conditions, unlocking particular possibility carry out usual lithographic fabrication steps. resulting MgO/BP stack then integrated and probed electrically, confirming tunnel properties of contacts. believe demonstration material passivated functional barrier provides promising perspective spin transport devices.