Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

• DOI: 10.1063/1.94682
• Publication Date: 2003-02-13T21:47:05Z
• Authors: D. Streit; R. A. Metzger; F. G. Allen
• Keywords: Sticking coefficient

Doped Si films were deposited by controlled coevaporation or Ga( p) of Sb(n) and at room temperature on an atomically clean substrate in ultrahigh vacuum. The amorphous then crystallized 230 Å/min heating the to 575 °C. Good crystal quality results, judged Rutherford backscattering transmission electron microscopy. Advantages over normal evaporative doping during molecular beam epitaxial growth ∼750 °C include (1) unity sticking coefficient dopant, (2) no smearing carry-over (3) better mobility (bulk values for n p∼1018 cm−3), (4) higher levels (>8×1018 cm−3 Ga, 8×1019 Sb).