Generation of divacancies in tin-doped silicon

• DOI: 10.1063/1.98902
• Publication Date: 2002-07-26T12:48:42Z
• Authors: B. G. Svensson; J. Svensson; J. L. Lindström; G. Davies; J. W. Corbett
• Keywords: Electron beam processing

Czochralski-grown tin-doped silicon samples have been irradiated by 2 MeV electrons at room temperature. The concentration of divacancies is studied as a function bombardment dose, and temperature during subsequent isochronal annealing. results are compared with that for control sample the role direct generation versus vacancy-vacancy pairing divacancy formation discussed.