Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride

• DOI: 10.1063/1.99398
• Publication Date: 2002-07-26T12:48:52Z
• Authors: T. Y. Sheng; Z. Q. Yu; G. J. Collins
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

We employ a well-confined hydrogen plasma of disk shape both as vacuum ultraviolet (VUV) lamp operating primarily at 121.5 nm and source atomic radicals. Both VUV photons act to dissociate feedstock gases used in low-temperature (<400 °C) metalorganic chemical vapor deposition (MOCVD). Thin films have been deposited with the confined an excimer laser 193 order compare two methods. Preliminary electrical properties via methods indicate superiority assisted MOCVD technique.