Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasers

• DOI: 10.1063/1.99457
• Publication Date: 2002-07-26T12:48:52Z
• Authors: T. Hayakawa; T. Suyama; K. Takahashi; M. Kondo; S. Yamamoto; T. Hijikata
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Fundamental characteristics of (111) oriented GaAs/AlGaAs graded-index separate-confinement-heterostructure single quantum well lasers have been compared with conventional (100) oriented lasers. In particular, the threshold current density Jth of (111) oriented lasers does not change with the well width Lz in the range of Lz=30–100 Å, which corresponds to an ideal extreme. The lowest Jth of 145 A/cm2 together with a high characteristic temperature T0 of 186 K in the threshold-temperature dependence has been achieved for an Lz of 40 Å and a cavity length of 490 μm. The dependence of T0 on Lz showed that T0 is maximum at Lz∼60 Å for both (111) and (100) oriented lasers.