β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

• DOI: 10.1063/5.0053743
• Publication Date: 2021-07-08T15:37:42Z
• Authors: Yu Xu; Chunfu Zhang; Pengru Yan; Zhe Li; Yachao Zhang; Dazheng Chen; Weidong Zhu; Qian Feng; Shengrui Xu; Jincheng Zhang; Yue Hao
• Keywords: Physics; QC1-999; 0103 physical sciences; 01 natural sciences

In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for first time. The x-ray diffraction scanning pattern identifies that layers are grown with (−201) planes parallel to plane of GaN template, and transmission electron microscopy shows lattice is regularly neatly arranged, indicating good crystal quality. based SBDs 4 20 µm anode–cathode lengths (LAC) exhibit specific on-resistance (Ron,sp) 1.58 39.8 Ω cm2 breakdown voltage (Vbr) 580 2400 V, respectively. present results show great potential non-vacuum cost-effective CVD as epitaxial growth technique employed in devices.