Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell

• DOI: 10.1063/5.0123342
• Publication Date: 2022-12-16T10:35:19Z
• Authors: Abinash Adhikari; Pawel Strak; Piotr Dluzewski; Agata Kaminska; Ewa Przezdziecka
• Keywords: Diamond anvil cell; Wide-bandgap semiconductor

Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property SLs investigated by absorption measurement at room temperature. ambient-pressure direct bandgap to be 2.76 eV. pressure dependence fundamental has been studied a diamond anvil cell (DAC) It that band-to-band transition shifts toward higher energy with applied pressure. varied from eV 2.87 0 5.9 GPa. coefficient for 26 meV/GPa. obtained experimental result supported theoretical results DFT calculations. volume deformation potential estimated empirical rule. We believe our findings may provide valuable insight better understanding {CdO/MgO} towards their future optoelectronics.