Gate controllable band alignment transition in 2D black-arsenic/WSe2 heterostructure

• DOI: 10.1063/5.0147499
• Publication Date: 2023-05-31T13:27:55Z
• Authors: Mianzeng Zhong; Baocheng Cui; Zhangxun Mo; Yali Yu; Qinglin Xia; Fen Zhang; Ziqi Zhou; Le Huang; Bo Li; Juehan Yang; Jun He; Zhongming Wei
• Keywords: 7. Clean energy; 01 natural sciences; 0104 chemical sciences

Controlling the manner of band alignment heterostructures increases design freedom with novel physical properties, enables new functional devices, and improves device performance, but lattice matching limits diversity traditional heterostructures. Van der Waals (vdWHs) fabricated by rationally mechanical restacking different two-dimensional (2D) layered materials or sequential synthesis can overcome this limitation. However, it is difficult to achieve full control over for a specific vdWHs means an applied vertical electric field. Here, we take advantage structure properties narrow-bandgap black-arsenic (b-As) large-bandgap WSe2 realize b-As/WSe2 type-I alignment. The be tuned from type I II gate field, which greatly photoresponsivity 103. An ultra-fast photoresponse about 570 ns obtained, much better than that same structure. also high-performance rectifier phototransistor ultra-high rectification ratio exceeding 106, small conductance slope 86 mV/dec, low curvature coefficient 46 V−1. Our work paves way exploitation b-As heterojunction low-power optoelectronic applications.