Magnetic and transport properties of GdBi single crystal

• DOI: 10.1063/5.0180325
• Publication Date: 2024-01-16T09:37:33Z
• Authors: Gourav Dwari; Souvik Sasmal; Bishal Maity; Ruta Kulkarni; Arumugam Thamizhavel
• Keywords: Residual resistivity; Metal–insulator transition

Single crystal of binary compound crystallizing in the space group Fm3̅m has been grown by flux method. The crystals are high quality with residual resistivity ratio value 80. Magnetic and electrical transport studies have performed on well oriented single crystal. Antiferromagnetic ordering is observed this at 27.5 K. Another magnetic transition may occur sub-2K temperature indicated increasing behavior susceptibility. Zero field shows normal metal-like above temperature. Low resistivity, however, metal to insulator like upturn presence field. This study reveals that low metallic rather than insulating.