HfO2-based resistive random access memory with an ultrahigh switching ratio

• DOI: 10.1063/5.0213173
• Publication Date: 2024-08-15T09:31:30Z
• Authors: Jinyan Pan; Hongyang He; Qiao Huang; Yunlong Gao; Yuxiang Lin; Ruotong He; Hongyu Chen
• Keywords: Non-Volatile Memory

Resistive Random Access Memory (RRAM) is considered one of the most promising candidates for big data storage. By using atomic layer deposition and magnetron sputtering, HfO2 thin films were prepared on ITO first, which exhibited good resistive switching (RS) characteristics in structure Ag/HfO2/ITO. analyzing RS mechanism, it found that both metal conductive filaments oxygen vacancy coexisted Sn ion can influence retention RRAM. Furthermore, a device Ag/HfO2/Pt was proposed prepared, excellent characteristics, including an ultrahigh ratio averaging up to 108 low operating voltage. It concluded difference work function between top bottom electrodes contributes improving ratio, reducing In addition, similar Ag/HfO2-based threshold selector high besides non-volatile memory. Hence, functionally equivalent combination RRAM selector. potential way replace conventional 1S1R