Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

• DOI: 10.1063/5.0213731
• Publication Date: 2024-06-05T13:47:11Z
• Authors: Beatrice Bednarz; Maria-Andromachi ...; Rohit Pachat; Leon Prädel; Martin Wortmann; Timo Kuschel; Shimpei Ono; Mathias Kläui; Liza Herrera Diez; Gerhard Jakob
• Keywords: Exchange bias

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between anisotropy ferromagnet exchange coupling an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used achieve very stable out-of-plane (OOP) oriented magnetization strong bias in samples as-deposited preferred in-plane (IP) magnetization. We show perpendicular interfacial increased by more than factor 2 stack Ta/Pt/PtMn/Co/HfO2 applying -2.5 V gate voltage over 3 nm HfO2, causing reorientation from IP OOP 50 mT. Comparing two thicknesses PtMn, identify notable trade-off: while thicker PtMn yields significantly larger bias, it also results slower response ionic liquid within accessible window. These pave way post-deposition electrical tailoring requiring significant bias.