III-nitride-based monolithic integration: From electronics to photonics

• DOI: 10.1063/5.0241011
• Publication Date: 2025-04-03T06:25:19Z
• Authors: Yijian Song; Rui He; Junxue Ran; Junxi Wang; Jinmin Li; Tongbo Wei

Over the past two decades, successful growth of high-quality wide-bandgap III-nitrides has made realization a broad range new device applications, including optoelectronic and microelectronic fields. Through monolithic integration photonic electronic devices simultaneously, different functional modules can be integrated on same wafer, eliminating parasitic effects caused by redundant external components, enhancing system robustness saving chip area. The scalable circuits have great potential for hybrid integration. This paper reviews latest research progress in III-nitride optoelectronics microelectronics recent years, especially gallium nitride-based light emitting diodes, laser high-electron-mobility transistors. We further analyze development status challenges power from perspectives process fabrication structure. applications systems are presented detail, sensing on-chip optical communication. Finally, we summarize current state development, opportunities, integration, providing insights into advancement semiconductors post-Moore's law era.