Schottky barrier formation and band realignment of rare-earth tritelluride charge density wave material–semiconductor interfaces

• DOI: 10.1063/5.0253262
• Publication Date: 2025-04-17T12:52:42Z
• Authors: Kentaro Yumigeta; Jan Kopaczek; Rounak Banerjee; Seyed Tohid Rajae...; Anvesh Yarra; Blake Povilus; Hayley Ruddick; Renee Sailus; Mukesh Kumar; Sushant Lakhavade; Yunbo Ou; Zafer Mutlu; Seth Ariel Tongay
• Keywords: Wide-bandgap semiconductor

We investigated the formation of Schottky barriers at interface between rare-earth tritelluride (RTe3) crystals and n-type silicon (n-Si) substrates. This study explores rectifying characteristics RTe3/n-Si junctions (R = Dy, Ho, Er) their relation to charge density wave (CDW) transition. Using thermionic emission model, we analyzed current–voltage (I–V) measurements obtain barrier height (ϕSBH) ideality factor (η). The temperature dependence extracted ϕSBH η reveals kink features near CDW transition temperature. Schottky–Mott model is employed explain these in derivatives 1/η attributes them changes work function RTe3 during Our findings suggest that can be utilized probe electronic states RTe3, enabling potential device applications electronics optoelectronics.