High- κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

• DOI: 10.1073/pnas.0914117107
• Publication Date: 2010-03-23T02:36:27Z
• Authors: Lei Liao; Jingwei Bai; Yongquan Qu; Yung-chen Lin; Yujing Li; Yu Huang; Xiangfeng Duan
• Keywords: Transistors, Electronic; Surface Properties; Equipment Design; Microscopy, Atomic Force; 01 natural sciences; Nanostructures; Microscopy, Electron, Transmission; Materials Testing; 0103 physical sciences; Aluminum Oxide; Nanotechnology; Graphite; Electronics; Crystallization; Algorithms

Deposition of high- κ dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high- κ dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high- κ dielectrics with graphene by first synthesizing freestanding high- κ oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al 2 O 3 nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm 2 /V·s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high- κ dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics.