Midgap radiative centers in carbon-enriched hexagonal boron nitride

• DOI: 10.1073/pnas.2003895117
• Publication Date: 2020-06-02T00:30:34Z
• Authors: Maciej Koperski; Diana Vaclavkova; Kenji Watanabe; Takashi Taniguchi; Kostya S. Novoselov; Marek Potemski
• Keywords: Hexagonal boron nitride; Wide-bandgap semiconductor; Characterization; Carbon fibers

Significance Well‐defined defect centers play a crucial role in condensed-matter physics. That is particularly evident the case of semiconductors and wide‐gap insulators, where midgap levels provide number versatile functionalities: from lasing to pressure sensing. Individual defects may become single-photon sources—crucial for applications quantum technology. Recently, such have been observed hexagonal boron nitride (hBN). Here, method fabricate stable reproducible hBN introduced. Large bandgap allows use many applications. Fabrication characterization hBN, which has relevant, emerging, wide-bandgap 2D material, an important step toward novel functionalities van der Waals heterostructures.