Wafer-scale transferred multilayer MoS2 for high performance field effect transistors

• DOI: 10.1088/1361-6528/aafe24
• Publication Date: 2019-01-14T22:17:32Z
• Authors: Simeng Zhang; Hu Xu; Fuyou Liao; Yangye Sun; Kun Ba; Zhengzong Sun; Zhi-Jun Qiu; Zihan Xu; Hao Zhu; Lin Chen; Qingqing Sun; Peng Zhou; Wenzhong Bao; David Wei Zhang
• Keywords: Electron Mobility

Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface interfacial energy. In this work, layer-by-layer vacuum stacking transfer method applied obtain non-destructive ML-MoS2 films. Back-gated field effect transistor (FET) arrays 1L- 2L-MoS2 are fabricated on same wafer, electrical performances compared. We observe significant increase field-effect mobility for FETs, up 32.5 cm2 V-1 s-1, which seven times higher than that 1L-MoS2 (4.5 s-1). Then we also 1L-, 2L-, 3L-, 4L-MoS2 FETs further investigate thickness-dependent characteristics transferred ML-MoS2. Measurement results show but smaller current on/off ratio layer number increases, suggesting balance can be achieved in 2L- 3L-MoS2 FETs. Dual-gated structure investigated demonstrate an improved electrostatic control channel.