Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories

• DOI: 10.1088/1361-6528/aba6b4
• Publication Date: 2020-07-16T22:15:29Z
• Authors: Yann Beilliard; François Paquette; Frédéric Brousseau; Serge Ecoffey; Fabien Alibart; Dominique Drouin
• Keywords: Memristor

Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered adopt these building blocks enabling large-scale quantum technologies via quantum-classical electronics co-integration. This study demonstrates multilevel 1.5 K of Al2O3/TiO2-x fabricated with complementary metal-oxide-semiconducto-compatible processes materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due Joule-heating-induced metal-insulator transition the Ti4O7 conductive filament. Carrier transport analysis all curves show that while insulating regime follows space charge limited current (SCLC) model states, conduction metallic is dominated by SCLC trap-assisted tunneling low- high-resistance states respectively. A non-monotonic conductance evolution observed regime, opposed continuous gradual increase decrease obtained during SET RESET operations. Cryogenic coupled an analytical accounting metal-insulator-transition-induced NDR effects device provide new insights on filament dynamics mechanisms. Our findings suggest combined longitudinal radial variations switching. behavior results from interplay between temperature- field-dependent geometrical physical