Hybrid application of laser-focused atomic deposition and extreme ultraviolet interference lithography methods for manufacturing of self-traceable nanogratings

• DOI: 10.1088/1361-6528/abdcec
• Publication Date: 2021-01-18T22:31:50Z
• Authors: Jie Liu; Jun Zhao; Xiao Deng; Shumin Yang; Chaofan Xue; Yanqing Wu; Renzhong Tai; Xiukun Hu; Gaoliang Dai; Tongbao Li; Xinbin Cheng
• Keywords: Extreme Ultraviolet Lithography; Interference lithography; Extreme ultraviolet; Laser linewidth

A novel hybrid method that combines the laser-focused atomic deposition (LFAD) and extreme ultraviolet (EUV) interference lithography has been introduced. The Cr grating manufactured by LFAD advantages of excellent uniformity, low line edge roughness its pitch value determined directly nature constants (i.e. self-traceable). To further enhance density grating, EUV with 13.4 nm wavelength was employed, which replicated master onto a Si wafer reduced to half. In order verify performance gratings this method, both mask (Cr grating) (silicon were calibrated metrological large range scanning probe microscope (Met.LR-SPM) at Physikalisch-Technische Bundesanstalt (PTB). results show have short-term long-term uniformity: (i) position deviation nonlinearity) is below ±1 nm; (ii) mean values 6 randomly selected measurement locations 0.003 nm. addition, as 212.781 ± 0.008 (k = 2). It well agrees theoretical 212.7787 0.0049 nm, confirming self-traceability LFAD. 106.460 0.012 corresponds shrinking factor 0.500 33 applied lithographic technique. This very close 0.5. uniform, self-traceable fabricated using approach can be reference materials in calibrating, e.g. magnification uniformity almost all kinds high resolution microscopes for nanotechnology.