Strain-modulated anomalous circular photogalvanic effect in p-type GaAs

• DOI: 10.1088/1367-2630/ad1a2b
• Publication Date: 2024-01-03T22:25:40Z
• Authors: Xiaolin Zeng; Jing Wu; Shenbo Zhu; Yu Liu; Yang Zhang; Yuan Li; Yonghai Chen
• Keywords: Strain (injury); Line (geometry); Position (finance)

Abstract The influence of spatial strain distribution on the anomalous circular photogalvanic effect (ACPGE) is investigated in p-type GaAs material. By tuning position exerted stress, it experimentally observed that uniform related ACPGE behaves like sine function, which resembles non-strain situation. Whereas gradient shows unimodal function line shape. To explain observations, a new theoretical model constructed based spin splitting energy bands. It demonstrated could purely derive from effect. Besides, combination and inverse Hall also investigated. This work reveals importance bands ACPGE, has not been considered before.