Improving the quality and properties of GaInSb crystal with Al doping

• DOI: 10.1088/1402-4896/ad28aa
• Publication Date: 2024-02-12T22:42:46Z
• Authors: Bowen Wang; Qiang Liu; Jian Liu; Chong Wang; Juncheng Liu
• Keywords: Crystal (programming language)

Abstract GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga 0.86 In 0.14 Sb and Al-doped (Ga Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) 0.005–0.015 molar ratio. effect Al on structure properties was studied. results indicated significantly reduced segregation indium (In) component in crystal, radial reaching minimum 0.051 mol% mm −1 axial 0.067 . also improved quality (lattice integrity) Sb. passivation compensation intrinsic defects inhibited generation dislocation, which density decreased 2.461 × 10 3 cm −2 as equivalent electron element gallium (Ga) not only made carrier increase 1.848 18 −3 but mobility 1.982 2 /(V·s), resulting resistivity decreasing 1.261 Ω·cm.