Electronic transport through defective semiconducting carbon nanotubes

Zigzag Mesoscopic physics Chirality Tight binding
DOI: 10.1088/2399-6528/aae4cb Publication Date: 2018-09-27T15:20:05Z
ABSTRACT
We investigate the electronic transport properties of semiconducting ($m$,$n$) carbon nanotubes (CNTs) on mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum calculations based recursive Green's function techniques and an underlying density-functional-based tight-binding model for description structure. Zigzag CNTs as well chiral different diameter are considered. Different defects exemplarily represented monovacancies divacancies. show energy-dependent transmission temperature-dependent conductance a number In limit many defetcs, described strong localization. Corresponding localization lengths calculated (energy dependent temperature dependent) systematically compared large CNTs. It shown, that distinction $(m-n)\,\mathrm{mod}\,3$ has to be drawn in order classify bandgaps. Besides this, given defect probability per unit cell depends linearly CNT diameter, but not chirality. Finally, elastic mean free paths diffusive regime computed few defects, yielding qualitatively same statements.
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