Quantitative annular dark-field STEM images of a silicon crystal using a large-angle convergent electron probe with a 300-kV cold field-emission gun

• DOI: 10.1093/jmicro/dfq084
• Publication Date: 2011-01-19T20:45:54Z
• Authors: S. Kim; Y. Oshima; H. Sawada; T. Kaneyama; Y. Kondo; M. Takeguchi; Y. Nakayama; Y. Tanishiro; K. Takayanagi
• Keywords: Field emission gun; Intensity; Dark field microscopy; Crystal (programming language); Convolution (computer science); Electron gun

Annular dark-field scanning transmission electron microscope (ADF-STEM) images of an Si (001) crystal were obtained by using aberration-corrected microscope, at 30-mrad convergent probe and cold field-emission gun 300 kV. The intensity ADF-STEM images, that is, the number scattered electrons relative to incident electrons, for specimen thickness from 10 50 nm was compared quantitatively with absorptive multi-slice simulation. column background intensities analyzed column-by-column two-dimensional Gaussian fitting. These found increase linearly sample thicknesses. However, simulated image gave higher lower all thickness. We experimental reproduced simulation convolution 70 pm full-width half-maximum thicknesses nm. possible factors accounted this is discussed.