Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser

• DOI: 10.1103/physrevapplied.12.024009
• Publication Date: 2019-08-08T14:54:56Z
• Authors: M. Chambonneau; L. Lavoute; D. Gaponov; V.Y. Fedorov; A. Hideur; S. Février; S. Tzortzakis; O. Utéza; D. Grojo
• Keywords: Picosecond

Recent advances in ultrafast laser 3D writing offer direct fabrication of in-chip silicon microsystems, but this technique remains extremely challenging, because propagation nonlinearities that limit energy localization inside narrow-band-gap materials. This study examines the complex flux and subsequent unusual modification due to intense picosecond pulses from a thulium-doped fiber laser. The best conditions for reliable data inscription deep are identified, which is critical step toward engineering solutions problem. Also, wavelength used here points facing next challenges associated with materials even narrower band gap.