High-Frequency Mechanical Excitation of a Silicon Nanostring with Piezoelectric Aluminum Nitride Layers

• DOI: 10.1103/physrevapplied.14.014054
• Publication Date: 2020-07-17T21:23:24Z
• Authors: Alessandro Pitanti; Tapani Makkonen; Martin F. Colombano; Simone Zanotto; Leonardo Vicarelli; Marco Cecchini; Amadeu Griol; Daniel Navarro-Ur...; Clivia Sotomayor-...; Alejandro Martinez; Jouni Ahopelto
• Keywords: Robustness

A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological functional advantages. Micro nano-mechanical devices are particularly suitable hybrid integration due easiness fabrication at multi-scales pervasive coupling with electrons photons. Here, we report on a nanomechanical platform where silicon chip is combined an aluminum nitride layer. Exploiting AlN piezoelectricity, Surface Acoustic Waves injected in Si layer material has been localy patterned etched form suspended nanostring. Characterizing nanostring vertical displacement induced by SAW, found external excitation peak efficiency excess 500 pm/V 1 GHz mechanical frequency. long term expertise photonic electronic as well SAW robustness versatility, our represents candidate systems.