Merged-Element Transmon

• DOI: 10.1103/physrevapplied.14.064006
• Publication Date: 2020-12-01T16:36:13Z
• Authors: R. Zhao; S. Park; T. Zhao; M. Bal; C.R.H. McRae; J. Long; D.P. Pappas
• Keywords: Quantum Physics; Condensed Matter - Materials Science; 0103 physical sciences; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph); Quantum Physics (quant-ph); 01 natural sciences

Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction (JJ) and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb--amorphous-Si--Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state dependent shift in the low power regime. The device also demonstrates the single- and multi-photon transitions that represent a weakly anharmonic system in the two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. A participation ratio analysis identifies the dielectric loss of the a-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence in relatively small device dimensions when implemented using a low-loss, epitaxially-grown, and lattice-matched trilayer.<br/>6 pages, 5 figures<br/>