Ferroelectric-Tunable Photoresponse in α- In2Se3 Photovoltaic Photodetectors: An Ab Initio Quantum Transport Study

• DOI: 10.1103/physrevapplied.19.024024
• Publication Date: 2023-02-08T15:01:47Z
• Authors: Shibo Fang; Chen Yang; Qiuhui Li; Baochun Wu; Linqiang Xu; Shiqi Liu; Jie Yang; Jiachen Ma; Jichao Dong; Ying Li; Jinbo Yang; Jing Lu
• Keywords: 02 engineering and technology; 0210 nano-technology

Two-dimensional \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the in a lateral monolayer (ML) p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of are up 69.2 31.6 mA/W for ferroelectric wurtzite zincblende phases (shortly named WZ' ZB') \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$, respectively, which 8--17 times higher than that extensively researched graphene photodetector (4 mA/W). Remarkably, photoresponses, defined as change ratio between two states, ML ZB'-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ photodetectors have average values 127% 121% surprising $2\ifmmode\times\else\texttimes\fi{}{10}^{6}\mathrm{%}$ $1\ifmmode\times\else\texttimes\fi{}{10}^{7}\mathrm{%}$, respectively. physical mechanism comes from electron density redistribution altered atomic displacements polarization switch, rather built-in potential induced surface charges. Such ferroelectric-tunable suggest fabrication future optical detection storage integrated devices.