Radiative Thermal Transistor

• DOI: 10.1103/physrevapplied.20.024061
• Publication Date: 2023-08-24T14:45:38Z
• Authors: Yuxuan Li; Yongdi Dang; Sen Zhang; Xinran Li; Yi Jin; Philippe Ben-Abda...; Jianbin Xu; Yungui Ma
• Keywords: Microelectronics; Black-body radiation; Thermal Radiation

Developing thermal analogues of a field-effect transistor could open the door to low-power and even zero-power communication technology working with heat rather than electricity. These solid-sate devices also find many applications in field active management numerous technologies (microelectronic, building science, energy harvesting conversion\dots{}). Recent theoretical works have suggested that photonic made three terminals can, principle, be used switch, modulate, amplify flux through exchange photons. Here, we report an experimental demonstration effect using noncontact system composed temperature-controlled metal-insulator-based material interacting far-field regime two blackbodies held at different temperatures. We demonstrate that, tiny change temperature layer, received by cold blackbody can drastically modified. An amplification parameter over 20 is reported.