Stress-Induced Shift of Band Gap in ZnO Nanowires from Finite-Element Modeling

• DOI: 10.1103/physrevapplied.8.034031
• Publication Date: 2017-09-27T16:50:51Z
• Authors: Lukasz Kuna; John Mangeri; Pu-Xian Gao; Serge Nakhmanson
• Keywords: Wide-bandgap semiconductor

The transparent conducting oxide ZnO is one of the most versatile materials for nanoscale applications, and can be shaped into a variety structures. Here finite-element modeling used to characterize band-gap changes induced by elastic distortions in monolithic nanowires, obtaining good agreement with experiments. Zn-ZnO core-shell nanowires are also proposed as an attractive optoelectronic system, their size, shape, morphology optimized maximum downshifts.