Electronic structure of antimony-doped tin oxide

• DOI: 10.1103/physrevb.51.13972
• Publication Date: 2002-07-27T03:37:43Z
• Authors: K. C. Mishra; K. H. Johnson; P. C. Schmidt
• Keywords: 0103 physical sciences; 01 natural sciences

The electronic structure and associated properties of antimony-doped tin (IV) oxide have been studied using both the self-consistent-field scattered-wave molecular-orbital cluster approach augment- ed-spherical-wave supercell band-structure approach. calculated energy eigenvalues wave functions used to interpret several interesting optoelectronic this defect semiconductor. nature origin gap from optical-absorption studies valence-band ultraviolet photoelectron spectroscopy (UPS) satisfactorily explained band pure oxide. It is observed that antimony ion leads an impurity in increases forbidden host material. This partially filled free-electron-like UPS peak near edge whose intensity grows with dopant concentration.