Quantifying the effective attenuation length in high-energy photoemission experiments

• DOI: 10.1103/physrevb.71.155117
• Publication Date: 2005-04-26T22:22:13Z
• Authors: Maurizio Sacchi; Francesco Offi; Piero Torelli; Andrea Fondacaro; Carlo Spezzani; Marco Cautero; Giuseppe Cautero; Simo Huotari; Marco Grioni; Renaud Delaunay; Mauro Fabrizioli; György Vankó; Giulio Monaco; Guido Paolicelli; Giovanni Stefani; Giancarlo Panaccione
• Keywords: Overlayer; Photoelectric effect; Attenuation length; Photon energy; Inverse photoemission spectroscopy

We have determined the effective attenuation length of photoelectrons over range kinetic energies from 4 to 6 keV in Co, Cu, Ge, and ${\mathrm{Gd}}_{2}{\mathrm{O}}_{3}$. The intensity substrate (Si) overlayer core level peaks was measured as a function thickness wedge-shaped overlayers. Experimental values vary between 45--50 \AA{} at 60--65 Ge. Smaller (30 50 \AA{}, respectively) are found Our results confirm that, for different classes materials, high energy photoemission spectroscopy has necessary depth sensitivity go beyond surface analysis, yielding important information on electronic properties bulk buried layers interfaces.