Experimental Evidence of the Oxygen Dimer in Silicon
Characterization
DOI:
10.1103/physrevlett.80.93
Publication Date:
2002-07-27T02:13:35Z
AUTHORS (4)
ABSTRACT
Optical characterization of the oxygen dimer in silicon has been performed for first time. The vibrational IR absorption bands at 1012, 1060, and $1105{\mathrm{cm}}^{\ensuremath{-}1}$ are shown to arise from this complex. Using heat-treatment studies, binding energy is determined be about 0.3 eV. Indications high migration ability predicted earlier found as well.
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