Hyperfine-mediated spin relaxation in donor-atom qubits in silicon

• DOI: 10.1103/physrevresearch.5.023043
• Publication Date: 2023-04-20T14:51:35Z
• Authors: Yu-Ling Hsueh; Ludwik Kranz; Daniel Keith; Serajum Monir; Yousun Chung; Samuel K. Gorman; Rajib Rahman; Michelle Y. Simmons
• Keywords: Physics; QC1-999; 0103 physical sciences; 01 natural sciences

Donor electron spin qubits hosted within nanoscale devices have demonstrated seconds-long relaxation times at magnetic fields suitable for the operation of in silicon $B=1.5\phantom{\rule{0.16em}{0ex}}\mathrm{T}$. The rates these been shown milliKelvin temperatures to be mediated by spin-orbit coupling with a ${B}^{5}$ dependency on field $B>3\phantom{\rule{0.16em}{0ex}}\mathrm{T}$ transition ${B}^{3}$ below ($B\ensuremath{\le}3\phantom{\rule{0.16em}{0ex}}\mathrm{T}$). This deviation has observed many qubit systems but is particularly notable multidonor quantum dot qubits. reason this remained mystery. In paper we show that low noise, crystalline can explained hyperfine mechanism through quantitative model rates. identifies importance donor nuclear flips which are more apparent larger numbers nuclei creates stronger confinement potentials and enhanced couplings. We theoretically atomic precision engineering locations qubits, and/or control, minimize allowing ${T}_{1}$ extend $\ensuremath{\sim}200$ seconds ($B=1.5\phantom{\rule{0.16em}{0ex}}\mathrm{T}$).