Domain wall nanoelectronics

• DOI: 10.1103/revmodphys.84.119
• Publication Date: 2012-02-03T18:57:38Z
• Authors: G. Catalan; J. Seidel; R. Ramesh; J. F. Scott
• Keywords: Domain wall (magnetism); Nanoelectronics

Domains in ferroelectrics were considered to be well understood by the middle of last century: They generally rectilinear, and their walls Ising-like. Their simplicity stood stark contrast more complex Bloch or N\'eel magnets. Only within past decade with introduction atomic-resolution studies via transmission electron microscopy, holography, atomic force microscopy polarization sensitivity has real complexity been revealed. Additional phenomena appear recent studies, especially magnetoelectric materials, where functional properties inside domain are being directly measured. In this paper these reviewed, focusing attention on multiferroics but making comparisons possible magnetic domains walls. An important part review will concern device applications, spotlight a new paradigm ferroic devices walls, rather than domains, active element. Here wall microelectronics is already full swing, owing largely work Cowburn Parkin colleagues. These exploit high mobilities magnets resulting velocities, which can supersonic, as shown Kreines' co-workers 30 years ago. By comparison, nanoelectronic employing ferroelectric often have slower speeds, may smaller size different properties. include conductivity (metallic even superconducting bulk insulating semiconducting oxides) fact that ferromagnetic while surrounding not.