A Novel Compact On-Chip Millimeter-Wave Band-Pass Filter with GaAs pHEMT Technology

• DOI: 10.1109/icmmt52847.2021.9618425
• Publication Date: 2021-12-01T20:56:07Z
• Authors: Wen-Tao Wang; Hao-Ran Zhu; Yu-Fa Sun; Zhi-Xiang Huang; Xian-Liang Wu
• Keywords: Return loss; Extremely high frequency

In this paper, a compact and high selectivity millimeter wave on-chip band-pass filter using GaAs pHEMT technology is proposed. A lumped element unit, which consists of series LC resonator an extra capacitor, used to produce transmission zero near the pass-band without occupying much area. The proposed two resonators. An additional grounded zero. area only 0.816×0.607mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . presented worked on 25.5 GHz, 3-dB bandwidth 21.5 GHz 29.5GHz. insertion loss around 1.1dB, return better than 17dB.