First Demonstration of Athermal Silicon Optical Interposers With Quantum Dot Lasers Operating up to 125 °C

• DOI: 10.1109/jlt.2014.2380811
• Publication Date: 2014-12-22T19:45:04Z
• Authors: Yutaka Urino; Nobuaki Hatori; Kenji Mizutani; Tatsuya Usuki; Junichi Fujikata; Koji Yamada; Tsuyoshi Horikawa; Takahiro Nakamura; Yasuhiko Arakawa
• Keywords: Photocurrent

We previously proposed a photonics-electronics convergence system to solve bandwidth bottleneck problems among large-scale integrations (LSIs) and demonstrated high density with silicon optical interposers at room temperature. For practical applications, the should be usable under high-temperature conditions or rapid temperature changes so that they can cope heat generated by mounted LSIs. designed fabricated athermal integrated temperature-insensitive components on substrate. An arrayed laser diode (LD) chip was flip-chip bonded Each LD had multiple quantum dot layers 1.3-μm lasing wavelength. The output power higher than 10 mW per channel up 100 °C. Silicon modulator germanium photodetector (PD) arrays were monolithically modulators structured as symmetric Mach-Zehnder interferometers, which inherently insensitive phase shifters composed of p-i-n diodes stable against change constant bias-current condition. PD photocurrent also insensitive, photo-to-dark current ratio 30 dB achieved error-free data links 20 Gbps 19 Tbps/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> operating 125 °C without adjusting LDs, modulators, PDs. are tolerant LSIs over extended industrial range complex monitoring feedback controls. is sufficient for needs late 2010s.