A 3D Integrated Energy-Efficient Transceiver Realized by Direct Bond Interconnect of Co-Designed 12 nm FinFET and Silicon Photonic Integrated Circuits

• DOI: 10.1109/jlt.2023.3291704
• Publication Date: 2023-07-03T18:14:39Z
• Authors: Po-Hsuan Chang; Anirban Samanta; Peng Yan; Mingye Fu; Yu Zhang; Mehmet Berkay On; Ankur Kumar; Hyungryul Kang; Il-Min Yi; Dedeepya Annabattuni; David Scott; Robert Patti; Yang-Hang Fan; Yuanming Zhu; Samuel Palermo; S. J. Ben Yoo
• Keywords: Transceiver; Photodiode; Optical interconnect; Extinction ratio; Modulation (music); Optical link

This paper presents the first experimental demonstration of an energy-efficient electronic-photonic co-designed transceiver circuit heterogeneously 3D co-integrated with high-density, low-parasitic Direct Bond Interconnect (DBI <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup> ) featuring 32-channel microdisk modulator/filter based optical transceivers for Wavelength Division Multiplexing (WDM) scheme. The silicon photonic chip is fabricated in AIM Photonics' integrated technology, and GlobalFoundries 12 nm FinFET process. transmitter consumes 2.823 mW at 18 Gb/s, 1.2 V <sub xmlns:xlink="http://www.w3.org/1999/xlink">ppd</sub> electrical modulation differential swing, achieves extinction ratio 7 dB. receiver utilized quarter-rate sampling via Injection-Locked Oscillator (ILO) forward clocking architecture, 6.11 mW, Optical Modulation Amplitude (OMA) sensitivity -20.3 dBm Gb/s under photodiode responsivity 0.8 A/W. can further operate 25 a -17.01 191 fJ/bit. pair 496 fJ/bit link efficiency.