Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

• DOI: 10.1109/led.2024.3363724
• Publication Date: 2024-02-08T18:46:01Z
• Authors: Wenxin Sun; Jiuren Zhou; Ning Liu; Siying Zheng; Xiaoxi Li; Bochang Li; Yan Liu; Yue Hao; Genquan Han

We evidently present the integration of ferroelectric Al <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{8}}$ </tex-math></inline-formula> Sc notation="LaTeX">$_{{0}.{2}}\text{N}$ onto a (001)-oriented silicon (Si) substrate. Our AlScN film, having thickness 116 nm, shows remnant polarization ( notation="LaTeX">${P}_{\text {r}}{)}$ exceeding notation="LaTeX">$124.5~\mu \text{C}$ /cm2 and coercive voltage 71.9 V. on Si demonstrates an endurance performance, surpassing notation="LaTeX">$1\times 10^{{4}}$ cycles under stress 75 V @ 100 kHz. The extrapolation retention properties reveals that substantial notation="LaTeX">$2{P}_{\text {r}}$ over notation="LaTeX">$200~\mu can be guaranteed for duration notation="LaTeX">$10^{{8}}$ seconds at 300 K. Furthermore, evaluation ratio breakdown to yields approximately 112% K 131% 500 These findings mark critical advancement in practical implementation wurtzite field-effect transistor-structural memories their high-density integration.