High Performance 2-Tier FinFETs with Low-Temperature (≤ 500 °C) Silicide Dopant Segregation Schottky S-D for M3D Circuits.

• DOI: 10.1109/led.2025.3553873
• Publication Date: 2025-03-24T18:32:37Z
• Authors: Feixiong Wang; Yadong Zhang; Yunjiao Bao; Shuang Liu; Xuexiang Zhang; Shujuan Mao; Mingzheng Ding; Jinbiao Liu; Jiaxin Yao; Qingzhu Zhang; Huaxiang Yin