A 220–275 GHz Direct-Conversion Receiver in 130-nm SiGe:C BiCMOS Technology

• DOI: 10.1109/lmwc.2017.2711559
• Publication Date: 2017-06-22T18:19:13Z
• Authors: M. H. Eissa; A. Awny; M. Ko; K. Schmalz; M. Elkhouly; A. Malignaggi; A. C. Ulusoy; D. Kissinger
• Keywords: Transimpedance amplifier; BiCMOS; Wideband; Direct-conversion receiver; Heterojunction bipolar transistor

This letter presents a wideband 240-GHz direct-conversion receiver manufactured in 130-nm SiGe:C BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> =300/500 GHz. A mixer-first is implemented, new dc offset cancellation loop architecture to compensate for the mixer offsets and biasing purposes. transimpedance amplifier utilized as load mixer, optimized maximize bandwidth. local oscillator (LO) chain that multiplies by 8 30-GHz input signal drives mixer. The proposed achieves widest 3-dB bandwidth among published works of 55 GHz, conversion gain 13 dB. measured average single-sideband noise figure 18 It dissipates 500 mW, while occupying 1.25 mm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , requiring LO only -10 dBm.