A 220–261 GHz Frequency Multiplier Chain (× 18) With 8-dBm Peak Output Power in 130-nm SiGe

• DOI: 10.1109/lmwc.2022.3154352
• Publication Date: 2022-03-10T20:26:23Z
• Authors: Esref Turkmen; Ibrahim Kagan Aks...; Wojciech Debski; Wolfgang Winkler; Ahmet Cagri Ulusoy
• Keywords: Frequency multiplier; BiCMOS; dBc; Heterojunction bipolar transistor; Silicon-germanium; Center frequency

This letter presents a 220–261-GHz frequency multiplier-by-18 chain in 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two triplers (36–45 108–135 third-order Chebyshev bandpass filter modified Gilbert-cell-based doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with 3-dB bandwidth 41 for an input −7 dBm. unwanted harmonics are suppressed more than 25 dBc over the range interest. consumes dc current 114.7 mA from supply voltage 3.3 V quiescent operation drains 130 dBm, which results drain efficiency 1.47%. total circuit occupies area 0.58 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (1.35 <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times0.43$ </tex-math></inline-formula> mm).