Low Dielectric Loss and Good Dielectric Thermal Stability of xNd(Zn1/2Ti1/2)O3–(1−x)Ba0.6Sr0.4TiO3 Thin Films Fabricated by Sol–Gel Method

• DOI: 10.1111/jace.12112
• Publication Date: 2012-12-13T18:44:33Z
• Authors: Xiaohua Sun; Ying Yang; Qiaoling Zhang; Shuang Hou; Caihua Huang; Zongzhi Hu; Jun Zou; Meiya Li; Tianyou Peng; Xing‐zhong Zhao
• Keywords: Dielectric loss; Thermal Stability; Figure of Merit; Temperature coefficient

x Nd ( Zn 1/2 Ti ) O 3 –(1− Ba 0.6 Sr 0.4 TiO NZT – BST thin films were fabricated on Pt / SiO 2 Si substrates by sol–gel method with = 0, 3%, 6%, and 10%. The structures, surface morphology, dielectric ferroelectric properties, thermal stability of investigated as a function content. It was observed that the introduction into decreased grain size, constant, ferroelectricity, tunability, significantly improved loss stability. corresponding reasons discussed. 10% film exhibited least 0.005 lowest temperature coefficient permittivity TCP 3.2 × 10 −3 /°C. In addition, figure merit FOM 10%) higher than pure film. Our results showed appropriate could modify quality good Especially for 3% film, it highest 33.58 its tunability 32.87% low 0.0098.