Characteristics and mechanism of etch process sensitivity to chamber surface condition

• DOI: 10.1116/1.1330266
• Publication Date: 2002-07-27T09:17:34Z
• Authors: Songlin Xu; Zhiwen Sun; Xueyu Qian; John Holland; Dragan Podlesnik
• Keywords: Polycrystalline silicon; Chamber pressure; Vacuum chamber; Deposition

Process variation with chamber surface condition in high density plasma reactors can seriously affect the process performance and productivity of device manufacturing. In this work, impact coating on polycrystalline-silicon (polysilicon) gate etching Cl2- HBr-based has been studied. The dependence sensitivity to various processing conditions characterized mechanism shift analyzed. Based experimental results, root cause attributed change recombination rate free radicals different surfaces which leads a reactive neutral density. Under certain discharge condition, Cl Br densities clean anodized aluminum alumina are >60% lower than those seasoned silicon oxide deposition, resulting polysilicon etch former case. general, depends regime is higher for processes where more chemical nature, such as at pressure Cl2-based chemistry. Processes oxygen concentration source power also sensitive due accelerating oxidation chamber. Approaches reduce effect have discussed.