MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy

• DOI: 10.1116/6.0003652
• Publication Date: 2024-07-10T11:51:23Z
• Authors: J. Patouillard; M. Bernard; S. Cadot; R. Gassilloud; N. Bernier; A. Grenier; A. Mantoux; E. Blanquet; F. Martin; C. Raynaud; F. Gianesello
• Keywords: [SPI]Engineering Sciences [physics]; CrossMark; 02 engineering and technology; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics; 0210 nano-technology; 530; [SPI.MAT]Engineering Sciences [physics]/Materials; [SPI.TRON]Engineering Sciences [physics]/Electronics

Aluminum nitride (AlN) is a wide bandgap material used in acoustic devices, piezo- micro-electromechanical system and promising for other electronic applications. However, most applications, the AlN crystalline quality obtained by PVD or MOCVD insufficient, suitable growth substrates providing an adapted lattice match coefficient of thermal expansion are limited. Alternatively, monocrystalline wafers not yet available 200/300 mm sizes suffer from high costs issues. Here, we propose novel approach involving two-dimensional transition metal dichalcogenide (TMD) as seed layer, which displays excellent matching with (>98%) allowing strong enhancement c axis texture sputtered layers on Si(100)/SiO2 oxide (500 nm) substrates. We have successfully demonstrated eightfold improvement (002) rocking curve compared to reference samples grown SiO2, thus relevant cost-effective process large-scale deployment high-quality III-N materials silicon-based