Atomically engineered electron spin lifetimes of 30 s in silicon

• DOI: 10.1126/sciadv.1602811
• Publication Date: 2017-04-28T19:49:28Z
• Authors: Thomas F. Watson; Bent Weber; Yu-Ling Hsueh; Lloyd C. L. Holle...; Rajib Rahman; Michelle Y. Simmons
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy; Research Articles

Scaling up to large arrays of donor-based spin qubits for quantum computation will require the ability perform high-fidelity readout multiple individual qubits. Recent experiments have shown that limiting factor many is lifetime electron spin. We demonstrate longest reported lifetimes (up 30 s) any qubit in a nanoelectronic device. By atomic-level engineering wave function within phosphorus atom dots, we can minimize relaxation agreement with recent theoretical predictions. These allow us sequential two fidelities as high 99.8%, which above surface code fault-tolerant threshold. This work paves way future on multiqubit systems using donors silicon.