Giant Piezoelectricity on Si for Hyperactive MEMS

• DOI: 10.1126/science.1207186
• Publication Date: 2011-11-17T20:21:43Z
• Authors: S. H. Baek; J. Park; D. M. Kim; V. A. Aksyuk; R. R. Das; S. D. Bu; D. A. Felker; J. Lettieri; V. Vaithyanathan; S. S. N. Bharadwaja; N. Bassiri-Gharb; Y. B. Chen; H. P. Sun; C. M. Folkman; H. W. Jang; D. J. Kreft; S. K. Streiffer; R. Ramesh; X. Q. Pan; S. Trolier-McKinstry; D. G. Schlom; M. S. Rzchowski; R. H. Blick; C. B. Eom
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such MEMS has long been constrained by the inability to integrate materials with giant response, as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers use an SrTiO(3) template layer superior coefficients (e(31,f) = -27 ± 3 coulombs per square meter) figures merit for energy-harvesting systems. have incorporated these heterostructures into microcantilevers that are actuated extremely low drive voltage due thin-film properties rival bulk single crystals. These exhibit very large electromechanical coupling ultrasound medical imaging, microfluidic control, mechanical energy harvesting.